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Product Detailed Parameters
- Description：IGBT NPT 600V 10A TO-263
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：15 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 5A
- Power - Max：73.5 W
- Switching Energy：80µJ (on), 70µJ (off)
- Input Type：Standard
- Gate Charge：12.1 nC
- Td (on/off) @ 25°C：5.4ns/25.4ns
- Test Condition：400V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：35 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The FGB5N60UNDF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Non-Punch-Through (NPT) technology and is housed in a TO-263 (D2PAK) surface-mount package with three pins. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 10 A at 25°C. Key electrical parameters include a maximum power dissipation of 73.5 W, a gate-emitter voltage range of -20 V to +20 V, and a minimum operating temperature of -55°C with a maximum of +150°C.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust switching performance.
- Designed for surface-mount integration via the TO-263 (D2PAK) package.
- Supports high-voltage operation up to 600 V with single transistor configuration.
Applications
- Industrial motor drives
- Switched-mode power supplies (SMPS)
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material composition declarations directly from manufacturer documentation prior to procurement. Ensure the component matches the required thermal and electrical ratings for the target application environment.
Selection Notes
Select this component when a surface-mount IGBT with 600V blocking capability and 10A current handling is required. Consider the TO-263 package for PCB space constraints and thermal management needs. Evaluate the NPT technology benefits for applications requiring reliable switching characteristics under varying load conditions compared to alternative packages or technologies.
Part Context
This part belongs to onsemi's portfolio of discrete power semiconductors designed for intelligent power and sensing technologies. It serves as a fundamental switching element within broader system solutions for industrial automation and energy infrastructure. The component supports the company's focus on delivering efficient and reliable power conversion solutions for mission-critical systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult the official datasheet or contact the manufacturer for qualified alternatives or cross-reference information.
