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The FGD3040G2_SN00297 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter voltage rating of 400 V and a maximum continuous collector current of 41 A. The device is designed for surface-mount applications, utilizing a TO-252AA package. Key electrical characteristics include a power dissipation capacity of 150 W and a gate charge of 21 nC. This component is engineered to provide efficient switching performance in power conversion systems.
Verify the exact part number suffix against official manufacturer documentation to ensure correct variant identification. Confirm RoHS compliance status and specific packaging requirements with authorized distributors prior to ordering. Cross-reference datasheet revisions to confirm pinout and thermal characteristics match design specifications.
Select this component for designs requiring a robust 400 V rated switch with moderate current handling capabilities. The TO-252AA form factor is appropriate for applications prioritizing surface-mount technology integration over through-hole mounting. Ensure thermal management solutions align with the 150 W dissipation rating under expected operating conditions.
This device belongs to onsemi's portfolio of discrete power semiconductors, specifically within the single IGBT category. These components are integral to modern power electronics, offering improved switching speeds and lower conduction losses compared to older technologies. The product line supports various industrial and consumer applications demanding reliable high-power switching.
Consult official substitution guides for compatible alternatives. Verify that any substitute matches the 400 V rating, 41 A current capacity, and TO-252AA package dimensions to maintain mechanical and electrical compatibility.