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Product Detailed Parameters
- Description：IGBT 500V 27A DPAK-3
- Series：EcoSPARK®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：32 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.2V @ 4V, 6A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：22 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The FGD3050G2V is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, housed in a TO-252-3 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 500 V and a continuous collector current of 32 A at 25°C. The device exhibits a typical saturation voltage (VCE(sat)) of 1.3 V and a gate-emitter leakage current of 25 µA. Power dissipation is rated at 150 W, with an operating temperature range spanning from -55°C to +175°C junction temperature. It complies with RoHS standards and holds AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards for robust performance in demanding environments.
- Optimized low saturation voltage design enhances energy efficiency and reduces thermal management requirements.
- Wide operating temperature range supports stable functionality across extreme industrial and automotive conditions.
Applications
- On-board chargers (OBC) for electric vehicles
- DC-DC converters in automotive power systems
- Industrial motor drives and control circuits
Procurement Notes
Verify the specific suffix G2V against official datasheets to confirm pinout and electrical characteristics match your design requirements. Confirm RoHS compliance status and AEC-Q101 certification through manufacturer documentation before integration. Check for any recent Product Change Notifications (PCN) regarding manufacturing site or material composition changes that may impact long-term supply stability.
Selection Notes
Select this component when a 500V IGBT with high current capability in a compact SMD package is required. Ensure the thermal design accommodates the 150W power dissipation rating within the specified junction temperature limits. Verify that the gate drive voltage aligns with the specified VGE parameters for optimal switching performance and minimal losses.
Part Context
This part belongs to onsemi's EcoSPARK® series of single gate bipolar transistors. The FGD3050G2V represents a generation of optimized IGBTs designed for high-efficiency power conversion applications. It serves as a key discrete solution for medium-power switching tasks where size constraints and thermal performance are critical factors in system architecture.
Replacement Considerations
The FGD3050G2 is a closely related variant within the same family. Verify if the non-V suffix meets all electrical and mechanical specifications for your application. Cross-reference datasheets for differences in packaging, thermal resistance, or specific parameter tolerances before substituting.
