FGD3325G2-F085

Overview

The FGD3325G2-F085 is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the onsemi ecospark 2 series. It features a collector-emitter voltage (Vceo) of 250 V and a continuous collector current (Ic) of 33 A. The device has a maximum power dissipation of 330 mJ and operates within a temperature range of -40 °C to +175 °C. Packaged in TO-262, it utilizes through-hole mounting for robust integration.

Feature Summary

• N-channel IGBT technology
• ecospark 2 ignition design
• High thermal stability

Applications

• Industrial motor drives
• Power supplies
• Inverters

Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging and specifications. Confirm RoHS compliance status with the manufacturer or authorized distributor before procurement. Check for any specific handling requirements related to electrostatic discharge protection during storage and assembly processes.

Selection Notes

Select this component for applications requiring 250 V blocking capability and moderate current handling. Consider the TO-262 package for through-hole mounting needs. Evaluate thermal management solutions based on the 330 mJ energy rating and operating temperature limits to ensure reliable performance under load conditions.

Part Context

This IGBT belongs to the ecospark 2 family, designed for high-efficiency switching applications. The series emphasizes low conduction losses and robust short-circuit withstand capability. It serves as a key component in power electronics systems where reliability and thermal performance are critical for long-term operation.

Replacement Considerations

Consult official cross-reference guides for compatible substitutes. Ensure replacement parts match voltage, current, and package specifications. Verify electrical characteristics align with original design requirements before implementation.