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Product Detailed Parameters
- Description：IGBT 600V 6A TO-252AA
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：25 A
- Vce(on) (Max) @ Vge, Ic：1.5V @ 10V, 3A
- Power - Max：40 W
- Switching Energy：250µJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：12.5 nC
- Td (on/off) @ 25°C：40ns/600ns
- Test Condition：480V, 3A, 470Ohm, 10V
- Reverse Recovery Time (trr)：234 ns
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA
- Grade：-
- Qualification：-
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Overview
The onsemi FGD3N60LSDTM is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. It features a 600V collector-emitter breakdown voltage and supports a continuous collector current of 6A, with a pulsed current rating of 25A. The device operates in a surface-mount TO-252AA (DPAK) package, offering a maximum power dissipation of 40W at 25°C. Key electrical characteristics include a saturation voltage of 1.5V at 3A and 10V gate drive, a gate charge of 12.5nC, and turn-on/turn-off times of 40ns and 600ns respectively. It complies with AEC-Q100 automotive standards.
Feature Summary
- Automotive-grade reliability certified under AEC-Q100 standards for robust performance in demanding environments.
- Optimized low gate charge design facilitates efficient driving and reduces control circuit complexity.
- Surface-mount DPAK packaging enables compact board layout and automated assembly integration.
Applications
- High-frequency inverters for electric vehicle auxiliary systems
- Switch-mode power supplies requiring isolated high-voltage switching
- Industrial motor control circuits
Procurement Notes
Verify the specific ordering suffix to confirm the tape-and-reel packaging configuration, as indicated by distributor listings. Confirm RoHS3 compliance status through official manufacturer documentation prior to integration. Ensure the component meets the required temperature range specifications for the target operational environment.
Selection Notes
Select this IGBT when a 600V rating and 6A continuous current are sufficient for the load requirements. Consider the 40W thermal dissipation limit and ensure adequate heatsinking or PCB copper area management. The TO-252AA package is suitable for space-constrained designs where through-hole alternatives are not feasible.
Part Context
This component belongs to the FGD3N60LSD series from onsemi, which focuses on high-voltage IGBT solutions. The 'TM' suffix typically denotes the reel packaging variant. It serves as a discrete switching element within broader power electronics architectures, distinct from integrated modules or MOSFET alternatives like the FCP36N60N.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Evaluate alternative 600V, 6A IGBTs in TO-252 packages only after verifying pinout compatibility and electrical parameter equivalence against the original datasheet.
