FGD3N60UNDF

Overview

The FGD3N60UNDF is a silicon N-channel IGBT from onsemi, housed in a TO-220F package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 15 A at 25°C. The device has a typical collector-emitter saturation voltage (Vce(sat)) of 2.2 V. Power dissipation (Pd) is rated at 17 W. This component is designed for high-voltage switching applications requiring robust performance.

Feature Summary

• High voltage capability with 600 V breakdown rating
• Suitable for general-purpose switching applications
• Through-hole mounting for reliable thermal management

Applications

• General purpose power switching
• Motor control circuits
• Power supply inverters

Procurement Notes

Verify the exact part number against official onsemi documentation to ensure compatibility. Confirm RoHS compliance status through the manufacturer's material declaration. Check for any end-of-life notifications or production discontinuance notices before finalizing procurement plans.

Selection Notes

Select this component based on its 600 V voltage rating and 15 A current capacity. Ensure the thermal design accommodates the 17 W power dissipation limit. Verify that the TO-220F package fits the available board space and mounting requirements.

Part Context

This IGBT belongs to onsemi's standard silicon transistor lineup. It serves as a discrete switching element in power electronics. The TO-220F package provides electrical isolation for heatsink mounting. It is distinct from MOSFETs by its bipolar conduction characteristics.

Replacement Considerations

Check for direct substitutes with identical pinouts and electrical ratings. Verify that alternative components meet the same 600 V and 15 A specifications. Ensure thermal resistance values are compatible with existing heat sinking solutions.