FGD5T120SH

$2.02

Description：IGBT TRENCH FS 1200V 10A TO252AA
Series：-

SKU:d0e5bf93fb3d Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 10A TO252AA
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：12.5 A
Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 5A
Power - Max：69 W
Switching Energy：247µJ (on), 94µJ (off)
Input Type：Standard
Gate Charge：6.7 nC
Td (on/off) @ 25°C：4.8ns/24.8ns
Test Condition：600V, 5A, 30Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252AA
Grade：-
Qualification：-

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FGD5T120SH

Overview

The FGD5T120SH is a single N-channel IGBT manufactured by onsemi, housed in a TO-252AA surface-mount package. It features a trench field stop technology with a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 10 A. The device has a maximum power dissipation of 69 W at 25°C case temperature. It operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Utilizes trench field stop technology for optimized switching performance and reduced conduction losses.
Designed for high-voltage applications requiring robust avalanche capability and thermal stability.
Surface-mount TO-252AA package facilitates automated assembly and efficient PCB layout.

Applications

High-frequency switch-mode power supplies
Industrial motor drive inverters
Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific datasheet revision and ordering suffix upon procurement to ensure compliance with the required electrical characteristics and packaging specifications. Confirm that the supplier provides official documentation from onsemi or authorized distributors to guarantee component authenticity and traceability.

Selection Notes

Select this component when designing circuits requiring high blocking voltage and moderate current handling in a compact surface-mount form factor. Ensure adequate heatsinking is provided to maintain junction temperatures within the specified limits under continuous operation conditions.

Part Context

This part belongs to onsemi's discrete IGBT portfolio, leveraging trench field stop architecture. It serves as a key switching element in medium-power electronic converters, offering improved efficiency compared to standard planar technologies while maintaining compatibility with common gate drive interfaces.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides for potential alternatives if direct replacement is necessary.