FGF65A3H

Description：IGBT TRENCH FS 650V 50A TO-3PF
Series：-

SKU:357d524cc1fd Category: Single IGBTs Brand: Sanken Electric USA Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 50A TO-3PF
Series：-
Mfr：Sanken Electric USA Inc.
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.73V @ 15V, 30A
Power - Max：72 W
Switching Energy：500µJ (on), 400µJ (off)
Input Type：Standard
Gate Charge：60 nC
Td (on/off) @ 25°C：30ns/90ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：50 ns
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3 Full Pack
Supplier Device Package：TO-3PF
Grade：-
Qualification：-

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FGF65A3H

Overview

The FGF65A3H is a 650 V Field Stop IGBT manufactured by Sanken Electric, packaged in TO3PF-3L. It features an original trench structure that reduces gate capacitance for high-speed switching and lower losses. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V typ. at 30 A, a short-circuit withstand time of 10 μs, and a reverse recovery diode with a forward voltage of 1.8 V typ. The device supports a continuous collector current of 30 A at 100 °C case temperature and operates up to a junction temperature of 175 °C.

Feature Summary

Sanken original trench structure decreases gate capacitance to achieve high speed switching and reduce switching loss.
Integrated fast recovery diode provides soft and very fast-recovery characteristics.
Positive VCE(sat) temperature coefficient ensures safer paralleling operation.

Applications

Welding Converters
PFC Circuit

Procurement Notes

Verify the specific package type (TO3PF-3L) against the design requirements before ordering. Confirm RoHS compliance status as per the latest manufacturer documentation. Check for any updated revision notices or engineering change orders associated with this component prior to final procurement decisions.

Selection Notes

Select the FGF65A3H when a 650 V rating and 30 A continuous current capability are required in a TO3PF-3L package. Ensure thermal management designs account for the specified thermal resistance values. Consider the 10 μs short-circuit withstand time for protection circuitry design. Verify compatibility with the intended gate drive voltage levels.

Part Context

The FGF65A3H belongs to the xGF65A3H series alongside KGF65A3H and MGF65A3H. These devices share identical electrical specifications but differ in physical packaging. The FGF65A3H specifically utilizes the TO3PF-3L package, distinguishing it from the TO247-3L and TO3P-3L variants within the same functional family.

Replacement Considerations

Direct substitutes within the same electrical specification family include KGF65A3H and MGF65A3H. Note that these alternatives utilize different packages (TO247-3L and TO3P-3L respectively). Physical mounting and thermal interface modifications may be necessary when substituting between these package types.

FAQ

What is the maximum short-circuit withstand time for the FGF65A3H?

The maximum short-circuit withstand time is 10 μs, measured at VGE = 15 V, VCE = 400 V, and TJ = 175 °C.

How does the trench structure affect performance?

The Sanken original trench structure decreases gate capacitance, which achieves high-speed switching and reduces switching loss, thereby improving circuit efficiency.