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The FGH25N120FTDS is a single N-channel IGBT from onsemi, utilizing Field Stop Trench technology. It features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 50 A. The device has a maximum power dissipation of 313 W and operates within a junction temperature range of -55°C to 175°C. Packaged in a TO-247-3 through-hole housing, it offers a switching speed of 1 MHz.
Verify the obsolete status of this component before procurement planning. Confirm that alternative sourcing channels are available as standard distribution may be discontinued. Ensure replacement strategies account for potential supply chain constraints associated with end-of-life products.
Select this component for hard-switching applications requiring high voltage isolation and robust thermal management. The TO-247 package facilitates effective heat sinking. Consider the specific current and voltage ratings relative to system load requirements to ensure reliable operation under peak conditions.
This part belongs to onsemi's IGBT portfolio, specifically designed for medium-power industrial applications. It represents the Field Stop Trench series, which combines low conduction losses with fast switching capabilities. The device serves as a critical switching element in power conversion systems demanding high efficiency.