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The FGH30N60LSDTU is a Field Stop IGBT from onsemi, housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A. The device supports a junction temperature range from -55°C to 150°C. Key electrical parameters include a maximum power dissipation of 480 W, a collector-emitter saturation voltage of 2.9 V at 15 V gate drive and 60 A, and a typical switching speed characterized by a turn-on delay of 12 ns and turn-off delay of 92 ns. It complies with RoHS standards.
Verify the specific suffix 'LS' against the official datasheet to confirm the exact variant specifications, as suffixes can denote specific testing or binning criteria. Ensure the procurement channel provides valid traceability documentation. Confirm that the component meets current environmental compliance requirements such as RoHS before finalizing orders.
Select this component for applications requiring 600V blocking capability and up to 60A continuous current. The Field Stop architecture offers efficiency benefits over standard trench technologies. Consider the TO-247-3 package for its thermal performance and mechanical robustness in high-power density designs where through-hole mounting is preferred.
This part belongs to the FGH series of Field Stop IGBTs from onsemi. These devices are engineered for high-efficiency power conversion. The series utilizes advanced silicon technology to reduce energy loss during switching transitions, making it suitable for modern power electronics demanding high reliability and performance.
FGH40N60SMD
The maximum operating junction temperature is 150°C.
Yes, the FGH30N60LSDTU utilizes Field Stop technology to achieve lower switching and conduction losses.