FGH30S130P

Overview

The FGH30S130P is a high-power NPN bipolar junction transistor manufactured by onsemi, designed for demanding switching applications. It features a TO-247AD insulated package with an integrated insulating washer, enabling direct mounting to heatsinks without additional isolation components. The device supports a maximum collector-emitter voltage of 1300 V and a continuous collector current of 30 A at 25°C. Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 20 under specified test conditions, a collector cutoff current of 5 mA maximum, and a transition frequency of 1 MHz. The component is rated for a power dissipation of 300 W and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Integrated thermal insulation in the TO-247AD package allows for simplified mechanical assembly and direct heatsink attachment.
• High voltage capability of 1300 V enables use in high-voltage industrial and power conversion systems.
• Robust construction supports high continuous current handling up to 30 A for heavy-duty load requirements.

Applications

• Induction heating power supplies
• High-frequency welding equipment
• Uninterruptible power supply (UPS) inverters

Procurement Notes

Verify the specific suffix code against the manufacturer's official datasheet to confirm exact binning and testing parameters. Confirm RoHS compliance status as legacy variants may differ. Ensure the supplier provides traceable documentation matching the original manufacturer's part identification. Check for any obsolescence notices or last-time buy recommendations before finalizing procurement plans.

Selection Notes

Select this component when high voltage blocking capability and moderate current handling are required in a thermally efficient package. Compare the transition frequency and storage time specifications against the target switching frequency to ensure adequate performance. Verify that the thermal resistance characteristics align with the system's heatsinking capabilities and ambient operating conditions.

Part Context

This device belongs to onsemi's high-voltage bipolar transistor portfolio, specifically engineered for hard-switching applications. It complements other Super Junction MOSFETs and IGBTs in the company's lineup, offering distinct switching characteristics suitable for resonant converters and high-voltage linear regulators where bipolar technology remains advantageous.

Replacement Considerations

Direct pin-compatible replacements include the FGH30N120D and FGH40N120D from the same manufacturer family. Cross-brand equivalents should be evaluated based on matching Vceo, Ic, and package thermal resistance specifications. Verify that substitute devices meet the same insulation and mounting requirements if direct board replacement is intended.