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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 30A
- Power - Max：250 W
- Switching Energy：760µJ (on), 400µJ (off)
- Input Type：Standard
- Gate Charge：155 nC
- Td (on/off) @ 25°C：22ns/139ns
- Test Condition：400V, 30A, 8Ohm, 15V
- Reverse Recovery Time (trr)：43 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH30T65UPDT-F155 is a P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a TO-247 G03 package designed for through-hole mounting. The device supports a maximum continuous collector current of 60 A and a collector-emitter voltage rating of 650 V. Key electrical parameters include a maximum power dissipation of 333 W, a collector-emitter saturation voltage of 1.6 V, and a gate-emitter voltage limit of ±30 V. It operates within a temperature range of -55°C to 175°C and carries RoHS certification.
Feature Summary
- Field Stop 4th Generation technology for optimized switching performance
- High thermal stability with a maximum junction temperature of 175°C
- Robust packaging suitable for high-power applications
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix F155 against official datasheets to confirm tape-and-reel packaging details. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB layout. Cross-reference with manufacturer documentation to validate compliance status and availability before finalizing procurement plans.
Selection Notes
Select this component for applications requiring a P-channel IGBT with 650V blocking capability. Compare the 60A current rating and 1.6V saturation voltage against circuit requirements. Consider the TO-247 G03 package dimensions for thermal management design. Verify that the ±30V gate drive compatibility aligns with the control system specifications.
Part Context
This device is part of onsemi's Field Stop 4th Generation IGBT portfolio, which focuses on improving efficiency in power conversion systems. The FGH30T65UPDT-F155 variant specifically offers P-channel functionality, distinguishing it from standard N-channel counterparts in the same voltage and current class. It serves as a discrete solution for high-power switching tasks.
Replacement Considerations
Direct substitutes may include other P-channel IGBTs from onsemi or competitors with matching 650V/60A ratings and TO-247 packages. Verify pinout compatibility and thermal resistance values when considering alternatives from manufacturers like Fuji Electric or Mitsubishi Electric.
