FGH40N60SFTU

FGH40N60SFTU

$2.11
  • Description:INSULATED GATE BIPOLAR TRANSISTO
  • Series:*

SKU:84ff6cd97dd0 Category: Brand:

  
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Product Detailed Parameters

  • Description:INSULATED GATE BIPOLAR TRANSISTO
  • Series:*
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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FGH40N60SFTU

Overview

The FGH40N60SFTU is a Field Stop IGBT manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It features a TO-247 package with a flange mount configuration. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a saturation voltage of 1.9 V at 40 A and a gate-emitter threshold voltage of 6 V. The component utilizes silicon technology and includes a built-in diode in its single configuration.

Feature Summary

  • Utilizes novel field stop IGBT technology for optimized performance
  • Designed for low conduction loss applications
  • Features a flange mount package for efficient thermal management

Applications

  • Photovoltaic inverters
  • Uninterruptible power supplies (UPS)
  • Welding machines
  • Communication power systems
  • Energy storage systems (ESS)

Procurement Notes

Verify the manufacturer designation as Fairchild Semiconductor or ON Semiconductor, noting the corporate acquisition history. Confirm the specific suffix 'SFTU' against official datasheets to ensure correct packaging and lead-free compliance. Cross-reference the JEDEC code TO-247AB and the JESD-30 code R-PSFM-T3 to validate the physical package type and terminal finish specifications.

Selection Notes

Select this component for high-efficiency switching applications requiring low saturation voltage. Ensure the drive circuit can handle the specified 20 V maximum gate-emitter voltage. Verify that the system's thermal design accommodates the 349 W power dissipation capability in the TO-247 flange mount package. Check compatibility with the required 6 V threshold voltage for proper turn-on characteristics.

Part Context

This part belongs to the FGH40N60 series of Field Stop IGBTs from Fairchild Semiconductor. It shares core specifications with variants like the FGH40N60SMD but may differ in packaging or suffix codes. The series is characterized by advanced field stop technology aimed at reducing both conduction and switching losses compared to standard IGBTs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consider verifying equivalent models within the same product family or consulting manufacturer cross-reference guides for compatible alternatives.

FGH40N60SFTUFGH40N60SFTU
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