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The onsemi FGH40N60SMD is a single N-channel Field Stop IGBT housed in a TO-247 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 80 A at 25°C. The device exhibits a typical saturation voltage (VCE(sat)) of 1.9 V at 40 A and 15 V gate drive, with a maximum rating of 2.5 V. Key switching parameters include an off-state energy loss (Eoff) of 6.5 µJ/A and a reverse recovery time (Trr) of 36 ns. Maximum power dissipation is 349 W at 25°C, reducing to 174 W at 100°C case temperature. The junction temperature range spans from -55°C to +175°C.
Verify the specific revision code and manufacturing origin against the latest datasheet before integration. Confirm RoHS compliance status as required by target market regulations. Ensure thermal management design accounts for the specified junction-to-case resistance values under actual operating conditions rather than idealized ratings.
Select this component for designs requiring robust 600 V blocking capability with high current handling in a standard TO-247 footprint. The low saturation voltage makes it suitable for efficiency-critical power conversion stages. Verify that the gate drive voltage aligns with the 15 V test conditions for optimal VCE(sat) performance.
This device belongs to the Fairchild Semiconductor (now onsemi) Field Stop IGBT series, designed to replace older trench technologies. It offers improved switching speed and lower forward voltage drop compared to conventional planar IGBTs. The part is widely used in industrial and renewable energy power electronics where reliability and thermal stability are paramount.
Direct pin-compatible alternatives within the same voltage and current class include the FGH60N60SMD, which offers higher current capacity (120 A) but similar packaging. For automotive-grade requirements, consider the FGAF40N60SMD if thermal constraints allow for its specific power dissipation profile.