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Product Detailed Parameters
- Description：IGBT FIELD STOP 600V 80A TO247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Power - Max：349 W
- Switching Energy：1.3mJ (on), 260µJ (off)
- Input Type：Standard
- Gate Charge：119 nC
- Td (on/off) @ 25°C：12ns/92ns
- Test Condition：400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH40N60SMDF is a Field Stop 2nd generation N-channel IGBT housed in a TO-247 package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 80 A at 25°C. The device exhibits a typical saturation voltage (VCE(sat)) of 1.9 V at 40 A and 15 V gate drive, with a maximum rating of 2.5 V. Key switching parameters include an off-state energy loss (Eoff) of 6.5 µJ/A and a reverse recovery time (Trr) of 36 ns. It supports a maximum junction temperature of 175°C and includes a built-in anti-parallel diode.
Feature Summary
- Utilizes novel Field Stop technology to achieve low conduction and switching losses.
- Features a positive temperature coefficient for stable parallel operation.
- Provides high input impedance and fast switching capabilities.
Applications
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC) circuits
Procurement Notes
Verify the specific suffix 'D' against the official datasheet to confirm it denotes a tape-and-reel packaging variant rather than a standard tube. Ensure the ordering part number matches the exact marking and electrical specifications required for the design. Confirm RoHS compliance status through the manufacturer's latest documentation.
Selection Notes
Select this component for applications requiring low saturation voltage and high current capability within a 600 V system. The 175°C junction temperature rating allows for robust thermal performance. Verify that the gate drive voltage aligns with the specified 15 V condition for optimal VCE(sat) performance.
Part Context
This device belongs to the Fairchild Semiconductor Field Stop 2nd Generation IGBT series, now manufactured by onsemi following their acquisition. The product line is designed to replace older planar technologies, offering superior efficiency for power conversion systems where minimizing energy loss is critical.
Replacement Considerations
Direct pin-compatible replacements may include the FGAF40N60SMD, though it utilizes a TO-3PFL package. Verify thermal resistance differences and mounting requirements when substituting between TO-247 and TO-3PFL form factors.
