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The FGH40N60UFTU is a single N-channel Field Stop IGBT manufactured by onsemi. It features a TO-247 package with through-hole mounting and a collector-emitter maximum voltage (VCEO) of 600 V. The device supports a continuous collector current (Ic) of 80 A at 25°C and handles a power dissipation (Pd) of 349 W. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a gate-emitter leakage current of 400 nA, and an operating temperature range from -55°C to +150°C.
Verify the specific suffix 'TU' against official datasheets to confirm tube packaging details. Ensure compatibility with thermal management requirements for 349 W dissipation. Cross-reference RoHS compliance status directly with manufacturer documentation prior to integration.
Select this component for high-current applications requiring robust 600 V blocking capability. Compare the 1.9 V saturation voltage against alternative devices to evaluate conduction losses. Confirm that the TO-247 footprint aligns with existing PCB layouts and heatsinking infrastructure.
This part belongs to the FGH40N60 series of Field Stop IGBTs. It shares core specifications with variants like FGH40N60SMD but differs in packaging configuration. The series targets industrial power conversion systems demanding high efficiency and reliability under heavy load conditions.
FGH40N60SMD: Similar electrical ratings but different package type. Verify pinout and thermal characteristics before substitution.