FGH40N65UFDTU

FGH40N65UFDTU

  • Description:IGBT FIELD STOP 650V 80A TO247
  • Series:-

SKU:61d12dd32a78 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT FIELD STOP 650V 80A TO247
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
  • Power - Max:290 W
  • Switching Energy:1.19mJ (on), 460µJ (off)
  • Input Type:Standard
  • Gate Charge:120 nC
  • Td (on/off) @ 25°C:24ns/112ns
  • Test Condition:400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr):45 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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FGH40N65UFDTU

Overview

The onsemi FGH40N65UFDTU is a Field Stop IGBT featuring an N-channel configuration housed in a TO-247 package. It supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device exhibits a saturation voltage of 1.8 V and dissipates up to 290 W of power. Operating within a junction temperature range of -55°C to +150°C, it meets AEC-Q101 automotive standards.

Feature Summary

  • Field stop technology for optimized switching performance
  • Automotive qualification compliant with AEC-Q101
  • Integrated fast recovery freewheeling diode

Applications

  • Automotive power electronics systems
  • High-efficiency motor drives
  • Industrial inverter circuits

Procurement Notes

Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging variations. Ensure compatibility with existing thermal management designs given the 290 W dissipation rating. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.

Selection Notes

Select this component for applications requiring robust automotive-grade reliability combined with low conduction losses. Compare the 1.8 V saturation voltage against alternative models to ensure optimal efficiency in high-current switching scenarios. Validate that the TO-247 footprint aligns with the target PCB layout constraints.

Part Context

This part belongs to onsemi's Field Stop IGBT family, designed to reduce switching losses compared to standard trench technologies. It serves as a high-performance discrete solution for medium-power conversion tasks where thermal stability and automotive durability are critical requirements.

Replacement Considerations

Direct substitutes include FGH40N60SMD and FGH40N65SMD from the same manufacturer. Verify pinout compatibility and thermal resistance values before swapping to ensure circuit integrity without redesign.

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