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The FGH40T120SQDNL4 is a single IGBT module with an integrated anti-parallel diode, utilizing Ultra Field Stop Trench technology. It operates in a TO-247-4L package with a collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 100°C. The device features a maximum junction temperature of 175°C and a typical saturation voltage of 1.78 V at 25°C. Switching losses are optimized for high-speed applications, with turn-off energy at 1.1 mJ under standard test conditions.
Verify the specific ordering suffix to confirm package type and lead-free status. Confirm thermal resistance values match your heatsink design requirements. Ensure gate drive voltage limits are respected during operation. Check datasheet revisions for updated electrical characteristics before finalizing designs.
Select this component for applications requiring robust switching performance and low conduction losses. Consider the thermal impedance curves for accurate junction temperature calculations. Verify that the pulsed current ratings align with the peak load requirements of the specific circuit topology.
This part belongs to onsemi's Ultra Field Stop IGBT family, designed for efficiency in power conversion. It complements other discrete IGBTs by offering a combined switch and diode solution in a standard through-hole package suitable for general-purpose industrial power electronics.
Check pinout compatibility if substituting with similar TO-247 packages. Verify that replacement devices meet or exceed the 1200V rating and 40A continuous current specifications. Ensure thermal management solutions remain adequate for any differences in thermal resistance parameters.