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The onsemi FGH40T65SH-F155 is a Field Stop Trench IGBT from the FS2 series, designed for high-efficiency power switching. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The device exhibits a low collector-emitter saturation voltage (VCEsat) of 1.9 V. Packaged in a TO-247-3 through-hole configuration, it supports a maximum power dissipation (Pd) of 333 W. The component operates within a temperature range of -55°C to +175°C and includes an integrated anti-parallel diode.
Verify the specific suffix against official datasheets to confirm pinout and electrical characteristics. Ensure compatibility with existing gate drive requirements and thermal management solutions before integration into production designs.
Select this component for applications requiring robust 650 V blocking capability and high current handling. Consider the TO-247 package constraints for PCB layout and heatsinking efficiency relative to the 333 W dissipation rating.
This part belongs to onsemi's FS2 (Field Stop 2nd Generation) IGBT family. It complements other devices in the FGH series by offering a balance between low saturation voltage and manageable switching losses for medium-frequency industrial applications.
Direct replacements include FGH40T65SMD-F155 or FGH40T65SPD-F155. Verify pin compatibility and exact VCEsat values when substituting to ensure circuit performance remains within design tolerances.