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Product Detailed Parameters
- Description：IGBT NPT 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：267 W
- Switching Energy：1.16mJ (on), 270µJ (off)
- Input Type：Standard
- Gate Charge：36 nC
- Td (on/off) @ 25°C：18ns/35ns
- Test Condition：400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The FGH40T65SPD-F085 is an N-channel Field-Stop Type 7 (FS7) Insulated Gate Bipolar Transistor manufactured by onsemi. It features a 650V collector-emitter voltage rating and a continuous collector current of 40A at 25°C. The device utilizes FS7 technology to achieve low conduction losses and optimized switching performance. It is housed in a TO-247-3 package designed for high thermal efficiency and robust mechanical stability. The component is qualified under AEC-Q101 standards, ensuring reliability for demanding automotive environments.
Feature Summary
- Field-Stop Type 7 (FS7) technology for enhanced efficiency
- Automotive-grade qualification compliant with AEC-Q101
- Optimized trade-off between conduction and switching losses
Applications
- On-board chargers (OBC)
- DC/DC converters
- Motor control inverters
Procurement Notes
Verify the specific suffix -F085 against official datasheets to confirm packaging details. Ensure compatibility with existing thermal management designs. Confirm that the AEC-Q101 qualification meets project requirements. Check for any recent product change notices affecting specifications or manufacturing sites.
Selection Notes
Select this component for applications requiring high reliability in automotive power electronics. Consider the 650V rating for systems operating below this threshold. Evaluate thermal resistance values for heatsink design. Compare switching energy parameters with alternative IGBTs for efficiency optimization.
Part Context
This part belongs to onsemi's FS7 IGBT family, targeting automotive traction and auxiliary power systems. It complements other FS7 devices offering similar voltage ratings but different current capabilities. The series emphasizes reduced system size through improved power density.
Replacement Considerations
Direct substitutes include other FS7 IGBTs from onsemi with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with competitor FS7 equivalents if supply constraints exist.
