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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：238 W
- Switching Energy：138µJ (on), 52µJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：16.4ns/86.4ns
- Test Condition：400V, 10A, 6Ohm, 15V
- Reverse Recovery Time (trr)：31.8 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH40T65SQD_F155 is a P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a maximum continuous collector current of 60 A and a collector-emitter voltage rating of 650 V. The device is housed in a TO-247 G03 package designed for through-hole mounting. Key electrical specifications include a maximum power dissipation of 333 W, a collector-emitter saturation voltage of 1.6 V, and a gate-emitter voltage range of ±30 V. It operates within a temperature range of -55°C to 175°C and carries RoHS certification.
Feature Summary
- Utilizes Field Stop 4th Generation technology for optimized switching performance.
- Designed with a P-channel configuration for specific circuit topologies.
- Features a robust TO-247 G03 package suitable for high-power thermal management.
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the exact part number suffix against official manufacturer documentation to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status directly with the supplier or original datasheet before integration into regulated products. Ensure the TO-247 G03 footprint matches the target PCB design requirements.
Selection Notes
Select this component when a P-channel IGBT with 650 V blocking capability and 60 A current handling is required. Compare the 1.6 V saturation voltage against system efficiency targets. Verify that the thermal resistance of the TO-247 G03 package meets the heat dissipation needs of the specific application environment.
Part Context
This device is part of onsemi's broader portfolio of high-power discrete semiconductors. It shares the Field Stop architecture with other members of the FGH series, offering improved trade-offs between conduction loss and switching speed compared to older generation technologies.
Replacement Considerations
Direct replacements must match the P-channel type, 650 V rating, and TO-247 G03 package. Cross-reference with other onsemi FGH models or equivalent P-channel IGBTs from other manufacturers, ensuring identical pin configurations and thermal characteristics.
