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The FGH4L50T65MQDC50 is a single Field-Stop (FS) IGBT from the EliteSiC series, manufactured by onsemi. It utilizes Silicon Carbide (SiC) technology and is housed in a TO-247-4L through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 110 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.45 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 385 W. It operates within a temperature range of -55°C to +175°C.
Verify component authenticity against official onsemi documentation before integration. Confirm that the specific ordering suffix matches the required technical specifications. Ensure supply chain partners provide valid traceability records. Cross-reference datasheet revisions to guarantee compatibility with existing design parameters.
Select this component for applications requiring high current handling and low saturation voltage. The TO-247-4L package facilitates efficient thermal management. Consider the 650 V rating for medium-voltage industrial circuits. Evaluate the 110 A continuous current capability against peak load requirements.
This part belongs to the EliteSiC family, which combines IGBT structures with advanced materials. The FGH4L50T65MQDC50 shares architectural similarities with other FS IGBTs in the series but offers distinct current and voltage ratings tailored for specific power density needs.
Publicly confirmed substitute part numbers are not available in the provided source material.