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Product Detailed Parameters
- Description：IGBT FS 650V 110A TO-247-4L
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：110 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 75A
- Power - Max：385 W
- Switching Energy：720µJ (on), 960µJ (off)
- Input Type：Standard
- Gate Charge：146 nC
- Td (on/off) @ 25°C：29ns/187ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4L
- Grade：-
- Qualification：-
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Overview
The FGH4L75T65MQDC50 is a single N-channel Field Stop IV IGBT with an integrated SiC Schottky diode in a TO-247-4LD package. It features a 650 V collector-emitter voltage and a typical saturation voltage of 1.45 V at 75 A. The device supports a continuous collector current of 110 A at 25°C and 75 A at 100°C, with a power dissipation of 385 W at 25°C. Operating junction temperature ranges from -55°C to +175°C.
Feature Summary
- Integrates a generation 1.5 SiC Schottky diode for low reverse recovery and forward recovery characteristics.
- Utilizes field stop 4th generation technology to optimize conduction and switching losses.
- Features positive temperature coefficient to facilitate easy parallel operation.
Applications
- Totem pole bridgeless PFC
- Inverter circuits
- EVSE charging stations
- Solar inverters
- UPS and ESS systems
Procurement Notes
Verify the specific ordering suffix DC50 against official documentation to confirm packaging details. Confirm RoHS compliance status through the manufacturer's latest release notes. Ensure the procurement channel provides valid traceability codes matching the marking diagram requirements.
Selection Notes
Select this component when high efficiency is required in medium-speed applications. The integrated SiC diode eliminates the need for external fast-recovery diodes. Verify that the thermal management design accommodates the specified junction-to-case thermal resistance values under expected load conditions.
Part Context
This part belongs to the EliteSiC series utilizing MQ (Medium Speed) technology. It combines onsemi's fourth-generation IGBT structure with silicon carbide diode technology within a standard TO-247-4 lead frame configuration for industrial power conversion modules.
Replacement Considerations
Direct substitutes include FGHL75T65MQDTL4 and FGH75T65SQDTL4. Verify pinout compatibility and thermal resistance specifications before implementation. Note that alternative parts may differ in switching speed or diode integration.
