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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 150A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
- Power - Max：455 W
- Switching Energy：2.4mJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：123 nC
- Td (on/off) @ 25°C：28ns/80ns
- Test Condition：400V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr)：43.4 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH75T65SHD-F155 is a Field Stop, Trench Insulated-Gate Bipolar Transistor (IGBT) rated for 650 V collector-emitter voltage and 150 A continuous collector current at 25 °C. It features a low saturation voltage of 1.6 V typical at 75 A and supports a maximum junction temperature of 175 °C. The device utilizes third-generation field stop technology to minimize conduction and switching losses. Packaged in a TO-247-3LD through-hole configuration, it offers a maximum power dissipation of 455 W at 25 °C case temperature.
Feature Summary
- Third-generation field stop IGBT technology designed for low conduction and switching losses
- Positive temperature coefficient enabling easy parallel operation
- High input impedance requiring minimal drive circuit complexity
- RoHS compliant and lead-free construction
Applications
- Solar inverters
- Uninterruptible power supplies (UPS)
- Electric welders
- Telecommunications power systems
- Energy storage systems (ESS)
- Power factor correction (PFC)
Procurement Notes
Verify the specific ordering suffix -F155 against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets all necessary environmental compliance standards required for the intended application before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high efficiency at high switching frequencies. Ensure the thermal management design accommodates the specified thermal resistance values. Validate gate drive parameters against the absolute maximum ratings to prevent overstress during transient conditions.
Part Context
This part belongs to onsemi’s third-generation field stop IGBT series. These devices are engineered specifically for energy infrastructure applications where minimizing power loss is critical. The series provides optimized performance characteristics suitable for demanding industrial and renewable energy conversion environments.
Replacement Considerations
Consult the official datasheet for confirmed substitute part numbers within the same product family or equivalent specifications from other manufacturers.
