FGH75T65SHDT-F155

FGH75T65SHDT-F155

$6.04
  • Description:IGBT TRENCH FS 650V 150A TO-247
  • Series:-

SKU:8aefa859b548 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 150A TO-247
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):150 A
  • Current - Collector Pulsed (Icm):225 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 75A
  • Power - Max:455 W
  • Switching Energy:3mJ (on), 750µJ (off)
  • Input Type:Standard
  • Gate Charge:123 nC
  • Td (on/off) @ 25°C:28ns/86ns
  • Test Condition:400V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr):76 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

Download product information

FGH75T65SHDT-F155

Overview

The onsemi FGH75T65SHDT-F155 is a single P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a TO-247 G03 through-hole package with three pins. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 75 A at 25°C case temperature. The device exhibits a maximum collector-emitter saturation voltage (VceSAT) of 1.6 V and a maximum power dissipation (Pd) of 455 W. It operates within a junction temperature range of -55°C to +175°C, with a maximum gate-emitter voltage (VGEO) of ±30 V.

Feature Summary

  • Field Stop 4th Generation technology for optimized switching performance
  • Positive temperature coefficient for stable parallel operation
  • High thermal stability supporting operation up to 175°C junction temperature

Applications

  • Solar inverters
  • Uninterruptible Power Supplies (UPS)
  • Electric welding machines
  • Energy Storage Systems (ESS)

Procurement Notes

Verify the specific suffix F155 against official datasheets to confirm tape-and-reel or tube packaging details. Ensure RoHS compliance status matches current regulatory requirements. Cross-reference pinout configurations for TO-247 G03 packages during PCB layout. Confirm that the manufacturer's latest documentation reflects any changes in marking codes or environmental declarations prior to final procurement.

Selection Notes

Select this component for designs requiring high current handling in the 650 V class. The 75 A rating suits medium-power industrial applications. Consider the 1.6 V saturation voltage for conduction loss calculations. Verify thermal management capabilities given the 455 W dissipation limit. Ensure drive circuits support the specified gate voltage limits for reliable switching.

Part Context

This IGBT is part of onsemi's Field Stop 4th Generation lineup, designed for efficiency in power conversion. It complements other devices in the FGH series, offering variations in current ratings while maintaining similar voltage classes. The technology focuses on reducing switching losses compared to earlier generations, making it suitable for modern high-frequency power electronics.

Replacement Considerations

FGH75T65SHD-F155

FGH75T65SHDT-F155FGH75T65SHDT-F155
$6.04
Buy Now