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The onsemi FGH75T65SHDT-F155 is a single P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a TO-247 G03 through-hole package with three pins. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 75 A at 25°C case temperature. The device exhibits a maximum collector-emitter saturation voltage (VceSAT) of 1.6 V and a maximum power dissipation (Pd) of 455 W. It operates within a junction temperature range of -55°C to +175°C, with a maximum gate-emitter voltage (VGEO) of ±30 V.
Verify the specific suffix F155 against official datasheets to confirm tape-and-reel or tube packaging details. Ensure RoHS compliance status matches current regulatory requirements. Cross-reference pinout configurations for TO-247 G03 packages during PCB layout. Confirm that the manufacturer's latest documentation reflects any changes in marking codes or environmental declarations prior to final procurement.
Select this component for designs requiring high current handling in the 650 V class. The 75 A rating suits medium-power industrial applications. Consider the 1.6 V saturation voltage for conduction loss calculations. Verify thermal management capabilities given the 455 W dissipation limit. Ensure drive circuits support the specified gate voltage limits for reliable switching.
This IGBT is part of onsemi's Field Stop 4th Generation lineup, designed for efficiency in power conversion. It complements other devices in the FGH series, offering variations in current ratings while maintaining similar voltage classes. The technology focuses on reducing switching losses compared to earlier generations, making it suitable for modern high-frequency power electronics.
FGH75T65SHD-F155