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Product Detailed Parameters
- Description：IGBT FIELD STOP 650V 150A TO247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
- Power - Max：455 W
- Switching Energy：1.06mJ (on), 1.56mJ (off)
- Input Type：Standard
- Gate Charge：126 nC
- Td (on/off) @ 25°C：55ns/189ns
- Test Condition：400V, 75A, 15Ohm, 15V
- Reverse Recovery Time (trr)：76 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4
- Grade：-
- Qualification：-
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Overview
The FGH75T65SHDTL4 is a Field Stop, Trench IGBT manufactured by onsemi. It features a collector-emitter voltage (Vces) of 650 V and a continuous collector current (Ic) of 75 A at 100°C case temperature. The device utilizes novel field stop technology to achieve low saturation voltage (Vce(sat)) of 1.6 V typical at 75 A. It operates with a maximum junction temperature of 175°C and includes an integrated diode. Packaged in a TO-247-4LD configuration, it supports high input impedance and fast switching characteristics suitable for demanding power conversion applications.
Feature Summary
- Utilizes novel field stop IGBT technology for optimized performance
- Features positive temperature coefficient for easy parallel operation
- Includes a full-rated current diode with tight parameter distribution
- Provides high current capability with low saturation voltage
Applications
- Solar Inverter
- Uninterruptible Power Supply (UPS)
- Welder
- Telecom
- Energy Storage System (ESS)
Procurement Notes
Verify the specific ordering suffix TL4 corresponds to the tube packing method containing 30 units per tube. Confirm that the component is lead-free and RoHS compliant as stated in the datasheet. Ensure the procurement matches the exact part number FGH75T65SHDTL4/D to guarantee the correct electrical specifications and package type are received.
Selection Notes
Select this component when designing circuits requiring a 650 V rating with a 75 A continuous current capacity at elevated temperatures. The TO-247-4LD package facilitates effective thermal management through its dedicated Kelvin emitter pin. Consider the 1.6 V typical saturation voltage for conduction loss calculations and verify gate drive requirements against the specified threshold voltage range.
Part Context
This device belongs to onsemi's third-generation field stop IGBT series. It is designed to offer optimum performance for applications where low conduction and switching losses are essential. The product line emphasizes high efficiency and reliability in power conversion systems, leveraging trench gate technology to minimize switching energy while maintaining robust current handling capabilities.
Replacement Considerations
Direct replacements must match the 650 V / 75 A specification and TO-247-4LD package. Verify compatibility with existing PCB footprints, particularly the separation of the Kelvin emitter (E1) and power emitter (E2). Check if alternative devices from other manufacturers support the same 175°C junction temperature and similar switching characteristics.
