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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 150A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：375 W
- Switching Energy：760µJ (on), 180µJ (off)
- Input Type：Standard
- Gate Charge：128 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：43 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH75T65SQD-F155 is a Field Stop, Trench IGBT with an integrated diode in a TO-247-3LD package. It features a collector-emitter voltage of 650 V and a continuous collector current of 75 A at 100°C case temperature. The device exhibits a typical saturation voltage of 1.6 V at 75 A and supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.4 °C/W for the IGBT and 0.65 °C/W for the diode. Total switching loss is 370 µJ at 400 V and 18.8 A, rising to 927 µJ at 37.5 A.
Feature Summary
- Utilizes novel field stop IGBT technology for optimized performance in applications requiring low conduction and switching losses.
- Features a positive temperature coefficient to facilitate easy parallel operation and high current capability.
- Includes a full-rated antiparallel diode with fast reverse recovery characteristics.
Applications
- Solar Inverter
- Uninterruptible Power Supply (UPS)
- Welder
- Telecom
- Energy Storage System (ESS)
- Power Factor Correction (PFC)
Procurement Notes
Verify the specific ordering suffix -F155 against the manufacturer's latest documentation to confirm packing method and availability status. Ensure that the component meets all applicable RoHS compliance requirements before integration into the final design. Cross-reference the thermal resistance values provided in the datasheet with your system's cooling solution to guarantee safe operating temperatures under maximum load conditions.
Selection Notes
Select this component for designs requiring a 650 V rating with a 75 A continuous current capacity at elevated case temperatures. The low saturation voltage of 1.6 V makes it suitable for efficiency-critical power conversion stages. Consider the 175°C maximum junction temperature when calculating thermal management requirements for high-power density applications.
Part Context
This part belongs to onsemi’s fourth-generation Field Stop IGBT series. It is designed to replace previous generations where lower switching losses and higher reliability are required. The TO-247-3LD package provides a robust mechanical structure for through-hole mounting in industrial power electronics environments.
Replacement Considerations
Check for direct replacements within the same FS4 family, such as the FGH75T65SQD without the suffix, noting potential differences in packaging quantity or tape-and-reel configuration if applicable. Verify pinout compatibility and thermal characteristics when substituting with other 650 V trench IGBTs from different manufacturers.
