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The onsemi FGH75T65SQDNL4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the FS4 Trench and Field Stop series. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 150 A at 25°C. The device utilizes a TO-247-4 package for through-hole mounting, offering a maximum power dissipation (Pd) of 375 W. Key electrical characteristics include a collector-emitter saturation voltage (VCEsat) of 1.6 V and a gate-emitter leakage current of 400 nA. It operates within a temperature range of -55°C to +175°C.
Verify the specific ordering suffix against official onsemi documentation to confirm pinout configuration and packaging details. Ensure compliance with RoHS directives and check for any product discontinuance notifications or lifecycle status updates prior to finalizing procurement plans.
Select this component for high-power applications requiring low conduction losses and high thermal stability. Compare VCEsat and switching energy parameters against alternative FS4 variants to match specific efficiency targets. Confirm that the TO-247-4 footprint aligns with the printed circuit board design constraints.
This IGBT belongs to onsemi's FS4 family, designed for medium to high-power industrial applications. It complements other devices in the lineup by offering improved switching characteristics compared to previous generations, supporting higher frequency operations while maintaining reliability under harsh electrical conditions.
Direct replacements may include FGH75T65SQDTL4 or FGH75T65SHD-F155, subject to verification of pin compatibility and exact electrical parameter matching via official datasheets.