FGH75T65SQDNL4

FGH75T65SQDNL4

$8.08
  • Description:IGBT TRENCH FS 650V 200A TO-247
  • Series:-

SKU:7be579d71414 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 200A TO-247
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):200 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 75A
  • Power - Max:375 W
  • Switching Energy:1.25mJ (on), 1.26mJ (off)
  • Input Type:Standard
  • Gate Charge:152 nC
  • Td (on/off) @ 25°C:44ns/208ns
  • Test Condition:400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr):134 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-4
  • Supplier Device Package:TO-247-4L
  • Grade:-
  • Qualification:-

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FGH75T65SQDNL4

Overview

The onsemi FGH75T65SQDNL4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the FS4 Trench and Field Stop series. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 150 A at 25°C. The device utilizes a TO-247-4 package for through-hole mounting, offering a maximum power dissipation (Pd) of 375 W. Key electrical characteristics include a collector-emitter saturation voltage (VCEsat) of 1.6 V and a gate-emitter leakage current of 400 nA. It operates within a temperature range of -55°C to +175°C.

Feature Summary

  • FS4 Trench and Field Stop technology for optimized switching performance
  • Integrated fast recovery anti-parallel diode in TO-247-4 package
  • High short-circuit capability for robust industrial operation

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supplies (UPS)
  • High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm pinout configuration and packaging details. Ensure compliance with RoHS directives and check for any product discontinuance notifications or lifecycle status updates prior to finalizing procurement plans.

Selection Notes

Select this component for high-power applications requiring low conduction losses and high thermal stability. Compare VCEsat and switching energy parameters against alternative FS4 variants to match specific efficiency targets. Confirm that the TO-247-4 footprint aligns with the printed circuit board design constraints.

Part Context

This IGBT belongs to onsemi's FS4 family, designed for medium to high-power industrial applications. It complements other devices in the lineup by offering improved switching characteristics compared to previous generations, supporting higher frequency operations while maintaining reliability under harsh electrical conditions.

Replacement Considerations

Direct replacements may include FGH75T65SQDTL4 or FGH75T65SHD-F155, subject to verification of pin compatibility and exact electrical parameter matching via official datasheets.

FGH75T65SQDNL4FGH75T65SQDNL4
$8.08
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