FGH75T65SQDT_F155

Description：IGBT TRENCH FS 650V 150A TO-247
Series：-

SKU:b3238038509e Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 150A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：375 W
Switching Energy：300µJ (on), 70µJ (off)
Input Type：Standard
Gate Charge：128 nC
Td (on/off) @ 25°C：23ns/120ns
Test Condition：400V, 18.8A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：76 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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FGH75T65SQDT_F155

Overview

The onsemi FGH75T65SQDT_F155 is a Field Stop 4th Generation P-channel IGBT designed for high-efficiency power switching. It features a maximum continuous collector current (Ic) of 150 A at 25°C and a collector-emitter voltage (Vceo) rating of 650 V. The device operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation (Pd) of 375 W. Key electrical parameters include a collector-emitter saturation voltage (VceSAT) of 1.6 V and a maximum gate-emitter voltage (VGEO) of ±30 V. Packaged in a TO-247-4 through-hole configuration, it integrates an integrated fast recovery anti-parallel diode.

Feature Summary

Field Stop 4th Generation technology optimizes the trade-off between low conduction losses and fast switching speeds.
Positive temperature coefficient of the saturation voltage facilitates stable parallel operation without current derating.
Integrated fast recovery anti-parallel diode provides efficient freewheeling capability for inductive loads.

Applications

Solar inverters
Uninterruptible Power Supplies (UPS)
Electric vehicle charging stations

Procurement Notes

Verify the specific suffix _F155 against the manufacturer's latest datasheet to confirm packaging details and terminal plating specifications. Ensure the ordering part number matches the exact pinout and thermal characteristics required by the design. Cross-reference with official component databases to validate RoHS compliance status and any recent product change notifications affecting this specific variant.

Selection Notes

Select this component when designing circuits requiring high current handling up to 150 A with low saturation voltage. The TO-247-4 package supports robust thermal management for high-power density applications. Consider the 650 V blocking voltage for systems operating near standard grid voltages. Evaluate the switching energy ratings against the target frequency to ensure thermal limits are not exceeded during peak load conditions.

Part Context

This IGBT belongs to onsemi's Field Stop 4th Generation family, engineered for superior efficiency compared to previous trench technologies. The series targets industrial motor drives and renewable energy conversion systems where minimizing total power loss is critical. The integration of advanced field stop structures allows for reduced tail current during turn-off, enhancing overall system performance.