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The FGH75T65UPD is a field-stop trench IGBT manufactured by onsemi, designed for applications requiring low conduction and switching losses. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 150 A at TC = 25°C. The typical saturation voltage (VCE(sat)) is 1.65 V at IC = 75 A and VGE = 15 V. Maximum power dissipation is 375 W at TC = 25°C and 187 W at TC = 100°C. The device operates within a junction temperature range of -55°C to +175°C and includes an integrated diode with a forward current rating of 75 A at TC = 25°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and packing method. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure that the procurement channel provides valid traceability documents for quality assurance purposes.
Select this component when designing circuits that require robust short-circuit protection and efficient thermal management. Consider the 175°C maximum junction temperature capability for high-temperature environments. Evaluate gate resistance requirements to balance switching speed and electromagnetic interference based on the provided switching loss curves.
This part belongs to onsemi's series of field-stop trench IGBTs. It is packaged in a TO-247-3LD case. The product line targets high-efficiency power conversion applications where minimizing both conduction and switching losses is critical for overall system performance and reliability.
Check the datasheet for the FGH75T65UPD-F155 variant, which shares the same marking but may have specific packaging differences. Verify pinout compatibility and electrical parameters against alternative suppliers' parts before substitution.