SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGH80N60FDTU is a single N-channel Field Stop IGBT manufactured by onsemi, housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 80 A. The device supports a maximum gate-emitter voltage range of -20 V to +20 V and operates within a junction temperature range of -55 °C to +150 °C. This component utilizes silicon technology and is part of the FGH80N60FD series.
Verify availability status as the component may be discontinued or subject to supply constraints. Confirm RoHS compliance details via official documentation before integration. Ensure ordering suffixes match exact specifications, as variations can affect electrical characteristics or packaging. Cross-reference datasheet revisions to validate current manufacturing parameters.
Select this component for applications requiring 600 V blocking capability and 80 A continuous current handling in a standard TO-247-3 form factor. Consider thermal management requirements given the 150 °C maximum junction temperature limit. Verify that the switching speed and saturation voltage align with system efficiency targets compared to alternative IGBT technologies.
This device belongs to the FGH80N60FD series from onsemi, designed for high-power switching applications. It represents a specific variant within the manufacturer's portfolio of Field Stop IGBTs, offering a balance of conduction and switching performance suitable for medium-frequency power conversion systems.
Check for direct pin-compatible substitutes within the same voltage and current ratings. Verify if newer generations offer improved switching characteristics or lower saturation voltages while maintaining the TO-247-3 package footprint.