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The FGHL40T120RWD is a single discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Trench Field Stop VII (FS7) technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 80 A at 25°C. Power dissipation is rated at 600 W, with an operating temperature range from -55°C to +175°C. Key electrical parameters include a gate-emitter leakage current of 400 nA and a maximum gate-emitter voltage of 20 V.
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status via the manufacturer's current datasheet revision. Cross-reference the Mouser part number 863-FGHL40T120RWD with the original component marking to prevent substitution errors during assembly.
Select this component when a 1200V blocking capability and 80A continuous current rating are required in a TO-247-3 form factor. Ensure the thermal management design supports the 600W power dissipation limit. Verify that the drive circuitry accommodates the 20V maximum gate-emitter voltage specification for reliable switching control.
This IGBT belongs to the FGHL series utilizing FS7 technology, designed for high-efficiency power conversion. It serves as a standalone switching element distinct from integrated modules. The TO-247-3 package facilitates direct mounting onto heatsinks for effective thermal transfer in high-power density applications.
Direct pin-compatible substitutes require matching 1200V/80A ratings and TO-247-3 packaging. Verify saturation voltage and switching times against the original datasheet to maintain system efficiency. Consult onsemi for approved alternative part numbers within the same product family.