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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 40A
- Power - Max：268 W
- Switching Energy：1.19mJ (on), 630µJ (off)
- Input Type：Standard
- Gate Charge：99 nC
- Td (on/off) @ 25°C：21ns/90ns
- Test Condition：400V, 50A, 6Ohm, 15V
- Reverse Recovery Time (trr)：79 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGHL50T65MQDT is a field-stop trench IGBT from onsemi, utilizing fourth-generation medium-speed technology. It features a 650V collector-emitter voltage rating and a 50A continuous collector current at 100°C case temperature (80A at 25°C). The device has a maximum junction temperature of 175°C and a typical saturation voltage of 1.45V at 50A. It includes an integrated fast recovery diode with full rated current capability.
Feature Summary
- Field-stop fourth-generation medium-speed IGBT technology
- Positive temperature coefficient for easy parallel operation
- Integrated full-rated current diode
- Smooth optimized switching characteristics
Applications
- Solar inverters
- Uninterruptible power supplies (UPS)
- Energy storage systems (ESS)
- Power factor correction (PFC) circuits
Procurement Notes
Verify the specific ordering suffix to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through official datasheets or manufacturer declarations. Ensure the component matches the required thermal resistance values for the intended heat sink design. Check for any specific handling instructions regarding electrostatic discharge protection during assembly.
Selection Notes
Select this component for applications requiring high efficiency and robust thermal performance up to 175°C. The positive temperature coefficient facilitates parallel configurations for higher current demands. Consider the integrated diode's reverse recovery characteristics when designing snubber circuits or managing electromagnetic interference in switching applications.
Part Context
This part belongs to onsemi's FGHL series of field-stop trench IGBTs. It is designed as a replacement for older generation devices in mid-power applications. The 'M' in the model number typically denotes the specific diode configuration and package variant within the product family.
Replacement Considerations
Check for direct replacements within the FGHL series with compatible pinouts and electrical ratings. Verify that alternative parts offer similar saturation voltages and switching speeds to maintain system efficiency. Ensure any substitute component meets the same thermal and mechanical requirements for the existing PCB layout.
