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Product Detailed Parameters
- Description：IGBT 650V 100A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：268 W
- Switching Energy：410µJ (on), 88µJ (off)
- Input Type：Standard
- Gate Charge：99 nC
- Td (on/off) @ 25°C：19ns/93ns
- Test Condition：400V, 25A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGHL50T65SQ is a single Field Stop Generation 4 (FS4) silicon IGBT manufactured by onsemi. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 80 A at 25°C. The device exhibits a typical saturation voltage of 1.6 V at 50 A, with a maximum power dissipation of 268 W. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-247-3L through-hole package. The component holds AEC-Q101 qualification for automotive reliability.
Feature Summary
- Field Stop Generation 4 technology providing low conduction and switching losses
- Positive temperature coefficient facilitating parallel operation
- High input impedance combined with high current capability
Applications
- Power Factor Correction (PFC)
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Electronic Switching Systems (ESS)
- Welding Machines
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides valid RoHS compliance documentation. Confirm that the received components match the FS4 generation specifications required for the target circuit design.
Selection Notes
Select this component for applications requiring high efficiency and fast switching speeds in the 650V class. The positive temperature coefficient simplifies paralleling multiple units for higher current demands. Verify that the thermal management solution supports the specified 268 W power dissipation rating under operating conditions.
Part Context
This part belongs to the FS4 IGBT family from onsemi, designed for industrial and automotive power conversion. It represents an evolution in silicon IGBT technology, offering improved performance over previous generations while maintaining standard TO-247 mechanical footprints for easy integration into existing designs.
Replacement Considerations
Direct replacements must match the 650V/80A rating and TO-247-3L package. Verify gate threshold voltages and saturation characteristics to ensure equivalent switching performance. Cross-reference with other FS4 series parts for potential pin-compatible alternatives.
