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Product Detailed Parameters
- Description：IGBT FS 1200V 120A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 60A
- Power - Max：833 W
- Switching Energy：4.5mJ (on), 3.4mJ (off)
- Input Type：Standard
- Gate Charge：256 nC
- Td (on/off) @ 25°C：51ns/250ns
- Test Condition：600V, 60A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：257 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGHL60T120RWD is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Trench Field Stop VII technology and is housed in a TO-247-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 150A at 25°C. Key electrical parameters include a saturation voltage of 1.95V, a gate-emitter voltage range of -20V to +20V, and a power dissipation capacity of 1.495kW. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Employs Trench Field Stop VII technology for optimized switching performance
- Designed for high thermal stability with a maximum junction temperature of 175°C
- Features low saturation voltage characteristics for efficient conduction
Applications
- Industrial motor drives
- Switched-mode power supplies
- High-frequency inverters
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm exact electrical tolerances and packaging configurations. Ensure compatibility with standard TO-247-3 footprints during integration. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring robust 1200V blocking capability combined with high current handling. The TO-247-3 package facilitates effective heat dissipation for high-power density designs. Evaluate thermal management requirements against the 1.495kW dissipation rating to ensure reliable operation under continuous load conditions.
Part Context
This part belongs to onsemi's FGH series of discrete IGBTs, which are engineered for high-efficiency power conversion. The Trench Field Stop VII generation represents an advancement in reducing both conduction and switching losses compared to previous technologies.
Replacement Considerations
Consult official substitution guides for equivalent devices from onsemi or other manufacturers. Verify pinout compatibility and thermal resistance values when considering alternative packages or brands.
