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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 75A
- Power - Max：469 W
- Switching Energy：1.01mJ (on), 2.53mJ (off)
- Input Type：Standard
- Gate Charge：779 nC
- Td (on/off) @ 25°C：40ns/548ns
- Test Condition：400V, 75A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：87 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4L
- Grade：-
- Qualification：-
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Overview
The FGHL75T65LQDTL4 is a Field Stop Trench IGBT manufactured by onsemi, designed for high-efficiency power switching applications. It features a TO-247-4L surface mount package with four pins. The device supports a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. Key electrical parameters include a typical saturation voltage (VCE(sat)) of 1.6 V at 75 A, a maximum gate-emitter voltage (VGEO) of ±20 V, and a power dissipation (Pd) rating of 375 W. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Utilizes fourth-generation Field Stop Trench technology for optimized low conduction and switching losses.
- Features a separate emitter drive pin in the TO-247-4L package to minimize turn-on energy losses.
- Includes an integrated fast and soft-co-packaged free-wheeling diode with low forward voltage characteristics.
Applications
- High-frequency DC-DC converters
- Totem-pole bridgeless Power Factor Correction (PFC) circuits
- Uninterruptible Power Supply (UPS) inverters
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific ordering suffix matches the required package variant and compliance standards. Request official datasheets and quality certificates to ensure alignment with technical specifications before finalizing acquisition.
Selection Notes
Select this component when designing circuits requiring surface-mount IGBTs with integrated anti-parallel diodes. The TO-247-4L footprint is suitable for applications prioritizing reduced parasitic inductance and improved thermal management over traditional through-hole packages. Ensure gate drive capabilities support the specified voltage limits and switching speeds.
Part Context
This part belongs to the FS4 series of Field Stop Trench IGBTs from onsemi. It represents an evolution in power semiconductor design, focusing on efficiency improvements for modern power conversion topologies. The integration of the free-wheeling diode simplifies circuit layout and reduces overall system volume compared to discrete solutions.
Replacement Considerations
Direct replacements must match the 650V/80A rating, TO-247-4L surface mount package, and integrated diode configuration. Verify compatibility with existing PCB footprints and thermal interface requirements. Cross-reference with other FS4 series variants if pinout or electrical characteristics differ slightly.
