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The onsemi FGHL75T65MQDT is a Field Stop (FS4) technology Insulated Gate Bipolar Transistor rated for a maximum collector-emitter voltage of 650 V. It features a continuous collector current capacity of 75 A and operates within a junction temperature range from -55°C to +175°C. The device utilizes a TO-247-3L surface mount package with three pins, measuring 15.87 mm in length and 4.82 mm in height. It supports a maximum gate-emitter voltage of ±20 V and has a maximum power dissipation rating of 469 W.
Verify the specific suffix 'MQDT' against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Ensure that the ordering information matches the required surface mount configuration and that RoHS compliance standards are met for the intended deployment environment.
Select this component when a 650 V IGBT with 75 A continuous current handling is required in a surface mount form factor. Consider the FS4 technology benefits for applications demanding reduced switching losses. Validate that the PCB layout accommodates the specific thermal and mechanical dimensions of the TO-247-3L package.
This part belongs to the FGHL75T65 series of high-performance IGBTs from onsemi. It represents an evolution in Field Stop technology designed to improve efficiency in medium-power conversion applications. The device is distinct from through-hole variants by its specific mounting characteristics and thermal interface requirements.
Consult official substitution guides for equivalent 650 V, 75 A IGBTs in TO-247 packages. Verify pinout compatibility and thermal resistance values before replacing existing designs with alternative manufacturers' components.