SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi FGI3040G2-F085 is an N-channel Ignition IGBT in the ECOSPARK family, housed in a TO-262 (I2PAK) package. It features a 400 V collector-emitter breakdown voltage and supports a continuous collector current of 41 A at 25 °C case temperature. The device incorporates self-clamping capabilities for inductive switching energy up to 300 mJ at 25 °C junction temperature. It operates with logic-level gate drive voltages and maintains a wide operating junction temperature range from -55 °C to +175 °C.
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the specific ordering suffix matches the required package type and shipping configuration. Ensure compliance with RoHS directives and Pb-free manufacturing standards as specified in the official datasheet documentation.
Select this component when designing automotive ignition systems requiring robust inductive load handling. Evaluate thermal management strategies based on the 150 W power dissipation rating and derating curves. Verify that the gate drive voltage aligns with the specified logic-level thresholds for optimal saturation performance.
This part belongs to the ECOSPARK 300 mJ, 400 V N-Channel Ignition IGBT series. It shares electrical characteristics with variants such as FGB3040G2-F085, FGD3040G2-F085, and FGP3040G2-F085, differing primarily in physical package style and shipping format.
Direct substitutes include FGB3040G2-F085, FGD3040G2-F085, and FGP3040G2-F085. Note that the FGP3040G2-F085 and FGI3040G2-F085 are marked as discontinued in revision 6 of the datasheet; verify availability status before implementation.
The device supports a self-clamping inductive switching energy of 300 mJ at a starting junction temperature of 25 °C.
Yes, the FGI3040G2-F085 is qualified according to the AEC-Q101 standard and is capable of PPAP submission.
The device utilizes logic-level gate drive, allowing operation with lower gate voltages while maintaining specified on-state characteristics.