FGL40N120ANTU

Description：IGBT NPT 1200V 64A TO-264-3
Series：-

SKU:c352b7f9a97a Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 64A TO-264-3
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：64 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 40A
Power - Max：500 W
Switching Energy：2.3mJ (on), 1.1mJ (off)
Input Type：Standard
Gate Charge：220 nC
Td (on/off) @ 25°C：15ns/110ns
Test Condition：600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264-3
Grade：-
Qualification：-

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FGL40N120ANTU

Overview

The FGL40N120ANTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 40 A at 25°C, with a pulsed current capacity of 160 A. The device utilizes field-stop technology to achieve low saturation voltage and optimized switching performance. It is housed in a TO-264 package and includes an integrated anti-parallel diode. The maximum power dissipation is rated at 535 W, and the operating junction temperature range extends up to 175°C.

Feature Summary

Field-stop technology for reduced conduction losses
Integrated fast recovery anti-parallel diode
High thermal stability up to 175°C

Applications

Industrial motor drives
Uninterruptible power supplies
Switched-mode power supplies

Procurement Notes

Verify the specific suffix 'TU' against official onsemi documentation to confirm packaging details and compliance status. Ensure the component matches the required pinout and thermal characteristics for the target application before procurement.

Selection Notes

Select this component for high-voltage applications requiring robust switching capabilities. Consider the 1200V rating and 40A current handling when designing circuits that demand high efficiency and thermal resilience under heavy loads.

Part Context

This IGBT belongs to onsemi's discrete power transistor lineup, designed for medium to high-power conversion systems. It combines MOSFET gate drive simplicity with BJT low-conduction loss characteristics, suitable for demanding industrial environments.

Replacement Considerations

Check for direct equivalents such as the FGL40N120ANDTU or NGTB40N120FL2WG, ensuring identical voltage, current, and package specifications are met before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.