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The FGL60N100BNTDTU is a single NPT Trench IGBT manufactured by onsemi. It features a collector-emitter breakdown voltage of 1000 V and a continuous collector current rating of 60 A at 25°C. The device utilizes trench gate technology to achieve low saturation voltage characteristics. It is housed in a TO-247AD package designed for through-hole mounting. The component supports a maximum power dissipation of 300 W and operates within a junction temperature range of -55°C to +150°C.
This component belongs to the FGL series of NPT Trench IGBTs from onsemi, formerly part of Fairchild Semiconductor's portfolio prior to acquisition. The series is characterized by high voltage ratings and robust construction for power conversion systems.
The FGL60N100BNTD is the non-tape-and-reel variant of this component. Verify pinout compatibility and thermal resistance specifications when substituting with other 1000V 60A NPT Trench IGBTs.