FGL60N100DTU

Overview

The onsemi FGL60N100DTU is a trench gate Insulated Gate Bipolar Transistor (IGBT) with an integrated fast recovery diode, housed in a TO-264-3 through-hole package. It features a collector-emitter breakdown voltage of 1000 V and a continuous collector current rating of 60 A at 25°C case temperature. The device exhibits a maximum saturation voltage of 2.9 V at 60 A and 15 V gate drive. Key electrical parameters include a total gate charge of 230 nC, a reverse recovery time of 1.5 µs for the built-in diode, and a maximum power dissipation of 176 W. The operating junction temperature range spans from -55°C to +150°C.

Feature Summary

• Trench gate structure providing superior conduction and switching performance compared to planar designs.
• Integrated fast recovery diode for efficient commutation in bridge configurations.
• High noise immunity due to wide input impedance characteristics.

Applications

• Induction Heating (IH) systems
• Home appliance motor drives
• Microwave oven inverters

Procurement Notes

Verify component authenticity as this part number is listed as obsolete by the manufacturer. Sourcing may require checking secondary distributors or surplus markets. Confirm that the received units match the original Fairchild Semiconductor specifications, noting that onsemi acquired Fairchild's semiconductor business. Ensure storage conditions comply with moisture sensitivity level 1 requirements before soldering.

Selection Notes

Select this component for high-voltage induction heating applications requiring robust switching capabilities. The 1000 V rating suits mains-connected AC-DC conversion stages. Consider the thermal resistance values when designing heatsinking solutions. The TO-264-3 package allows for direct mounting to heat sinks. Evaluate the gate charge requirements against the driving circuit's capability to ensure adequate switching speeds without excessive losses.

Part Context

This device belongs to the FGL6 series of trench gate IGBTs originally developed by Fairchild Semiconductor. The series is designed for high-efficiency power conversion in consumer electronics and industrial appliances. The transition from planar to trench technology in this family reduces saturation voltage while maintaining high blocking voltage capabilities, making it suitable for demanding thermal environments typical in induction cooking equipment.

Replacement Considerations

As the part is obsolete, verify pin-compatible alternatives within the same voltage and current class. Check datasheets for matching Vce(sat), Qg, and trr specifications. Ensure any substitute maintains the TO-264-3 footprint and thermal characteristics. Cross-reference with current onsemi product lines for modern trench gate replacements if available.

FAQ

What is the maximum collector-emitter voltage for the FGL60N100DTU?

The maximum collector-emitter voltage (VCES) is 1000 V.

Does the FGL60N100DTU include an anti-parallel diode?

Yes, it features a built-in fast recovery diode with a reverse recovery time of 1.5 µs at 60 A.

What is the package type for this component?

It is housed in a TO-264-3 (TO-264AA) through-hole package.