FGP10N60UNDF

$0.84

Description：FGP10N60UNDF - IGBT, 600V, 10A,
Series：*

SKU:dafa51af4ed3 Category: Single IGBTs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：FGP10N60UNDF - IGBT, 600V, 10A,
Series：*
Mfr：Fairchild Semiconductor
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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FGP10N60UNDF

Overview

The FGP10N60UNDF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 15 A at 25°C. The device utilizes a TO-220F package for through-hole mounting. Key electrical parameters include a typical saturation voltage of 2.2 V and a power dissipation rating of 17 W. This component is designed for high-voltage switching applications requiring robust short-circuit capability.

Feature Summary

Short-circuit rated design for enhanced system reliability
Integrated anti-parallel diode for inductive load switching
Low saturation voltage for improved conduction efficiency

Applications

Motor control drives
Switching power supplies
Induction heating systems

Procurement Notes

Verify the manufacturer status carefully as this part number indicates end-of-life or obsolescence. Confirm availability with authorized distributors only. Ensure the procurement source provides valid traceability documentation to avoid counterfeit components. Check for RoHS compliance status before integration into regulated products.

Selection Notes

Select this IGBT for applications requiring 600V blocking capability and moderate current handling up to 15A. Consider the thermal resistance of the TO-220F package for heat sinking requirements. Evaluate the short-circuit withstand time against the protection circuitry speed in the target design to ensure safe operation under fault conditions.

Part Context

This component belongs to the UniFET™ IGBT family from onsemi, which combines MOS gate drive with bipolar conduction. The 'UNDF' suffix typically denotes specific packaging or tape-and-reel variations within the standard TO-220 form factor. It serves as a legacy replacement for older Fairchild Semiconductor IGBT designs in industrial equipment.

Replacement Considerations

Direct pin-compatible replacements may be limited due to the obsolete status. Verify equivalent parts such as the FGPF15N60 series for higher current ratings if space permits. Ensure any substitute matches the 600V Vceo and TO-220F footprint constraints.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.