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The FGP20N60UFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 20 A at 25 °C. The device utilizes a standard gate configuration with a maximum gate-emitter voltage range of -20 V to +20 V. Packaged in a TO-3P-3 (TO-3P) through-hole housing, it supports a maximum power dissipation of 160 W and operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific suffix 'DTU' against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations via the supplier's current documentation. Ensure the component matches the required TO-3P-3 lead form factor for your PCB or chassis mounting constraints before finalizing procurement.
Select this IGBT when a 600 V rating and 20 A continuous current capacity are required in a high-power through-hole package. Compare the saturation voltage and switching energy losses against alternative devices in the same voltage class to optimize efficiency. Verify that the gate charge characteristics align with your driver circuit capabilities to ensure reliable switching performance under load.
This component belongs to onsemi's high-performance IGBT portfolio designed for medium-to-high power conversion applications. It complements other devices in the series offering varying current ratings while maintaining consistent voltage blocking capabilities. The TO-3P package provides a cost-effective solution for industrial systems requiring robust mechanical stability and efficient heat sinking compared to surface-mount alternatives.
Direct substitutes include the FGA40N60UFDTU for higher current requirements or the SGP23N60UFTU for lower current needs within the same voltage class. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' equivalent TO-3P IGBTs.