FGP20N60UFDTU

FGP20N60UFDTU

  • Description:IGBT FIELD STOP 600V 40A TO-220
  • Series:-

SKU:c187a7acad7c Category: Brand:

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Product Detailed Parameters

  • Description:IGBT FIELD STOP 600V 40A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 20A
  • Power - Max:165 W
  • Switching Energy:380µJ (on), 260µJ (off)
  • Input Type:Standard
  • Gate Charge:63 nC
  • Td (on/off) @ 25°C:13ns/87ns
  • Test Condition:400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr):35 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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FGP20N60UFDTU

Overview

The FGP20N60UFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 20 A at 25 °C. The device utilizes a standard gate configuration with a maximum gate-emitter voltage range of -20 V to +20 V. Packaged in a TO-3P-3 (TO-3P) through-hole housing, it supports a maximum power dissipation of 160 W and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • High-voltage capability rated for 600 V collector-emitter applications
  • Standard gate drive interface compatible with common control logic levels
  • Robust thermal management design supporting up to 160 W power dissipation

Applications

  • Industrial motor drives and inverters
  • Switched-mode power supplies (SMPS)
  • High-frequency welding equipment

Procurement Notes

Verify the specific suffix 'DTU' against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations via the supplier's current documentation. Ensure the component matches the required TO-3P-3 lead form factor for your PCB or chassis mounting constraints before finalizing procurement.

Selection Notes

Select this IGBT when a 600 V rating and 20 A continuous current capacity are required in a high-power through-hole package. Compare the saturation voltage and switching energy losses against alternative devices in the same voltage class to optimize efficiency. Verify that the gate charge characteristics align with your driver circuit capabilities to ensure reliable switching performance under load.

Part Context

This component belongs to onsemi's high-performance IGBT portfolio designed for medium-to-high power conversion applications. It complements other devices in the series offering varying current ratings while maintaining consistent voltage blocking capabilities. The TO-3P package provides a cost-effective solution for industrial systems requiring robust mechanical stability and efficient heat sinking compared to surface-mount alternatives.

Replacement Considerations

Direct substitutes include the FGA40N60UFDTU for higher current requirements or the SGP23N60UFTU for lower current needs within the same voltage class. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' equivalent TO-3P IGBTs.

FGP20N60UFDTUFGP20N60UFDTU

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