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Product Detailed Parameters
- Description：IGBT 600V 75A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：290 W
- Switching Energy：115µJ (on), 195µJ (off)
- Input Type：Standard
- Gate Charge：35 nC
- Td (on/off) @ 25°C：8ns/35ns
- Test Condition：390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The FGP40N6S2 is an N-channel Field Stop IGBT from the SMPS II series, originally manufactured by Fairchild Semiconductor. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 75A at 25°C case temperature. The device operates with a gate-emitter plateau voltage of 6.5V typical and a low gate charge of 35nC at 15V. It supports switching frequencies up to 100kHz at 390V and 24A, or 200kHz at 390V and 18A. The unit is housed in a TO-220AB package with a maximum power dissipation of 290W.
Feature Summary
- Low gate charge and low plateau voltage design for reduced gate drive power requirements
- High avalanche energy capability rated at 260mJ for robust operation
- Optimized fast switching speed suitable for high-frequency applications
Applications
- Power Factor Correction (PFC) circuits
- Full bridge topologies
- Half bridge topologies
- Push-Pull circuits
- Uninterruptible power supplies
Procurement Notes
Verify component authenticity through authorized distributors or original manufacturer channels. Confirm datasheet revision status as the product was originally released by Fairchild Semiconductor. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly due to gate sensitivity.
Selection Notes
Select this component for designs requiring low conduction loss and fast switching times in high-voltage switched mode power supplies. Evaluate thermal management capabilities against the specified junction-to-case thermal resistance. Consider the specific operating frequency and load current requirements to ensure the device remains within its safe operating area limits.
Part Context
This part belongs to the SMPS II series of Low Gate Charge IGBTs, designed to combine fast switching speeds with lower gate charge and plateau voltage compared to previous generations. The series includes variants such as FGH40N6S2 and FGB40N6S2, offering different packaging options while maintaining identical electrical characteristics for flexible board layout integration.
Replacement Considerations
Direct replacements include FGH40N6S2 and FGB40N6S2 which share identical electrical specifications. Verify pinout compatibility and thermal resistance values when substituting between TO-220AB, TO-247, and TO-263AB packages.
