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Product Detailed Parameters
- Description：IGBT FIELD STOP 600V 10A TO-220
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：36 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 12V, 14A
- Power - Max：83 W
- Switching Energy：38µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：18.3 nC
- Td (on/off) @ 25°C：4.3ns/36ns
- Test Condition：400V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The FGP5N60LS is a 600 V, 10 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It utilizes the Field-Stop technology to achieve low saturation voltage and optimized switching performance. The device is housed in an isolated TO-220 package with a maximum power dissipation of 83 W at case temperature. Key electrical characteristics include a collector-emitter voltage of 600 V, continuous collector current of 10 A, and a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Field-Stop technology for reduced saturation voltage
- Optimized switching performance characteristics
- High thermal stability and robust packaging
Applications
- Switch-mode power supplies
- Motor control inverters
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability requirements prior to procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during assembly processes.
Selection Notes
Select this IGBT for applications requiring moderate current handling with efficient switching capabilities. Evaluate thermal management solutions to maintain junction temperature within specified limits under continuous load conditions. Consider gate drive voltage compatibility with the ±20 V maximum rating to ensure reliable operation and prevent gate oxide breakdown.
Part Context
This component belongs to the Fairchild Semiconductor high-voltage IGBT portfolio designed for general-purpose power switching. It represents a balance between conduction losses and switching speed, suitable for medium-power industrial and consumer electronics applications where efficiency and reliability are critical design parameters.
Replacement Considerations
Direct pin-compatible replacements may include other 600 V, 10 A N-channel IGBTs in TO-220 packages from the same manufacturer or competitors. Verify key parameters such as saturation voltage, switching times, and thermal resistance before substitution to ensure circuit performance remains within design specifications.
