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The FGPF120N30TU is a Power Dissipation Package (PDP) Trench IGBT manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 300 V and a continuous collector current rating of 120 A. The device utilizes trench gate technology to achieve low saturation voltage and fast switching characteristics. It is housed in a TO-247 package designed for through-hole mounting, supporting high-power applications with robust thermal performance.
Verify the manufacturer origin as Fairchild Semiconductor or its successor ON Semiconductor. Confirm the specific suffix TU indicates the correct tape-and-reel packaging variant if required. Ensure the component matches the TO-247 physical dimensions and pinout configuration before integration into the design.
Select this component when a 300 V blocking voltage and 120 A continuous current are required in a TO-247 form factor. Evaluate the thermal resistance parameters against the expected heat sink capacity. Compare the switching speed and saturation voltage requirements with alternative PDP trench IGBTs from the same product family.
This part belongs to the FGPF series of PDP Trench IGBTs from Fairchild Semiconductor. The series is characterized by advanced trench gate technology aimed at improving efficiency in high-power conversion applications. The manufacturer was acquired by ON Semiconductor, which continues to support these legacy power devices.
Direct substitutes include other 300V 120A PDP Trench IGBTs such as the FGPF120N30D. Verify pin compatibility and thermal specifications before substitution.