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The FGPF15N60UNDF is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-220F package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and offers a continuous collector current of 30 A at 25°C. Key electrical parameters include a saturation voltage of 2.2 V and a power dissipation rating of 17 W. This component is classified as a short circuit rated IGBT within the manufacturer's discrete transistor portfolio.
This component has reached the end-of-life stage, indicating that the manufacturer will discontinue production. Verification of final purchase availability is required before integration into new designs. Engineers should confirm specific discontinuation timelines and last-time buy windows directly with authorized distributors or the manufacturer to ensure supply continuity for existing manufacturing lines.
Designers should evaluate alternative components due to the end-of-life status of this part. Selection criteria must account for the 600 V blocking voltage and 30 A current capacity requirements. The TO-220F package constraints and 17 W power dissipation limit must align with the thermal management strategy of the target application to ensure reliable operation under specified load conditions.
The FGPF15N60UNDF belongs to the IGBT transistor category produced by onsemi. It utilizes silicon technology and is housed in a TO-220F package. This specific model represents a discontinued product line item, distinguishing it from currently active inventory within the manufacturer's broader portfolio of power switching devices.