FGPF30N30TDTU

FGPF30N30TDTU

$0.77
  • Description:IGBT TRENCH 300V TO-220F-3
  • Series:-

SKU:3b51fe6a3ba6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 300V TO-220F-3
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):80 A
  • Vce(on) (Max) @ Vge, Ic:1.5V @ 15V, 10A
  • Power - Max:44.6 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:65 nC
  • Td (on/off) @ 25°C:22ns/130ns
  • Test Condition:200V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr):22 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F-3
  • Grade:-
  • Qualification:-

Download product information

FGPF30N30TDTU

Overview

The FGPF30N30TDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the Fairchild Semiconductor UGBT series. It features a 300V collector-emitter breakdown voltage and a continuous collector current of 30A. The device utilizes Trench technology for optimized performance. It is housed in a TO-220-3 Full Pack (TO-220AB) through-hole package, designed for high-power applications. The component has a maximum power dissipation of 44.6W and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Incorporates Trench IGBT technology for enhanced switching efficiency.
  • Features a robust TO-220-3 Full Pack leaded package for effective thermal management.
  • Designed with high input impedance characteristics typical of MOS-gated devices.

Applications

  • Motor control systems
  • General purpose inverters
  • Servo controls

Procurement Notes

This component is marked as obsolete and discontinued by the manufacturer. Availability is limited to existing stock or third-party distributors. Verify authenticity carefully due to the end-of-life status. Ensure compatibility with legacy designs before sourcing. No new production units are available directly from Fairchild or onsemi.

Selection Notes

Select this part only for replacement in existing designs requiring a 300V, 30A N-channel IGBT in a TO-220-3 package. Consider modern equivalents if redesigning, as the original part is no longer manufactured. Check pinout and thermal resistance requirements against alternative components to ensure system reliability.

Part Context

The FGPF30N30TDTU belongs to the Fairchild UGBT series, which combines IGBT and MOSFET technologies. This series was engineered for high-speed switching applications. The specific model represents a standard discrete power transistor used in medium-power electronic circuits before its discontinuation.

Replacement Considerations

FGPF30N30D

FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage is 300V.

Is this component surface mount or through-hole?

It is a through-hole device packaged in a TO-220-3 Full Pack.

FGPF30N30TDTUFGPF30N30TDTU
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