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The FGPF30N30TDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the Fairchild Semiconductor UGBT series. It features a 300V collector-emitter breakdown voltage and a continuous collector current of 30A. The device utilizes Trench technology for optimized performance. It is housed in a TO-220-3 Full Pack (TO-220AB) through-hole package, designed for high-power applications. The component has a maximum power dissipation of 44.6W and operates within a temperature range of -55°C to +150°C.
This component is marked as obsolete and discontinued by the manufacturer. Availability is limited to existing stock or third-party distributors. Verify authenticity carefully due to the end-of-life status. Ensure compatibility with legacy designs before sourcing. No new production units are available directly from Fairchild or onsemi.
Select this part only for replacement in existing designs requiring a 300V, 30A N-channel IGBT in a TO-220-3 package. Consider modern equivalents if redesigning, as the original part is no longer manufactured. Check pinout and thermal resistance requirements against alternative components to ensure system reliability.
The FGPF30N30TDTU belongs to the Fairchild UGBT series, which combines IGBT and MOSFET technologies. This series was engineered for high-speed switching applications. The specific model represents a standard discrete power transistor used in medium-power electronic circuits before its discontinuation.
FGPF30N30D
The maximum collector-emitter breakdown voltage is 300V.
It is a through-hole device packaged in a TO-220-3 Full Pack.