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Product Detailed Parameters
- Description：IGBT TRENCH 300V TO-220F-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.5V @ 15V, 10A
- Power - Max：44.6 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：22ns/130ns
- Test Condition：200V, 20A, 20Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3
- Grade：-
- Qualification：-
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Overview
The FGPF30N30TTU is a Trench IGBT manufactured by onsemi, formerly Fairchild Semiconductor. It features a 300V collector-emitter voltage rating and a continuous collector current of 30A. The device utilizes PDP (Punch-Through) technology for optimized switching performance. It is housed in a TO-220-3 FP through-hole package designed for robust thermal management. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Incorporates Trench IGBT technology for improved switching characteristics.
- Features Punch-Through (PDP) design for enhanced voltage handling.
- Utilizes a TO-220-3 FP package for reliable through-hole mounting.
Applications
- Motor control systems
- Motion control drives
- Ignition controllers
Procurement Notes
Verify the manufacturer status carefully as this part is listed under onsemi following corporate acquisitions. Confirm availability with authorized distributors as stock levels fluctuate. Ensure the specific suffix matches the required packaging configuration. Check for RoHS compliance documentation relevant to the production batch. Validate that the TO-220-3 FP footprint aligns with the target PCB design requirements.
Selection Notes
Select this component for applications requiring 300V blocking capability with moderate current loads up to 30A. The TO-220-3 FP package is suitable for designs needing efficient heat dissipation without complex cooling solutions. Consider the switching speed characteristics inherent to Trench IGBT technology when designing gate drive circuits. Ensure the operating environment stays within the specified -55°C to +150°C junction temperature limits.
Part Context
This device belongs to the SPM 3 series family of power modules and discrete IGBTs. It represents the transition period where Fairchild Semiconductor's power products were integrated into onsemi's portfolio. The part number structure indicates a standard N-channel IGBT with specific thermal and electrical ratings defined by the manufacturer's legacy naming conventions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with direct replacements such as the FGPF45N45TTU only if higher voltage ratings are acceptable. Consult official cross-reference guides from onsemi for verified alternatives.
