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Product Detailed Parameters
- Description：IGBT TRENCH 300V TO-220F-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.5V @ 15V, 15A
- Power - Max：46.8 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：97 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3
- Grade：-
- Qualification：-
Download product information
Overview
The FGPF50N30TTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It utilizes trench IGBT technology to deliver optimized performance for Plasma Display Panel (PDP) applications. The device features a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 50A. Key electrical parameters include a maximum power dissipation of 46.8W, a gate charge of 35nC, and a saturation voltage of 1.5V at 20A with a 15V gate drive. It is housed in a TO-220F-3 through-hole package.
Feature Summary
- Utilizes novel trench IGBT technology for optimized performance
- Designed specifically for low-loss PDP applications
- Features high input impedance for easy driving
- Provides fast switching capabilities
Applications
- Plasma Display Panel (PDP) driver circuits
- Motor control systems
- Motion controllers
- Ignition controllers
Procurement Notes
Verify the specific manufacturer origin, as Fairchild's semiconductor assets were acquired by ON Semiconductor. Confirm that the component matches the original Fairchild specifications rather than generic equivalents. Check for RoHS compliance status and ensure the TO-220F-3 package dimensions align with your thermal management requirements before finalizing procurement.
Selection Notes
Select this component when a 300V rated IGBT with 50A continuous current capability is required for display panel or motor drive applications. The trench technology offers a balance of low saturation voltage and fast switching speed. Ensure the application can accommodate the 46.8W power dissipation and that the gate drive circuitry supports the specified 15V logic level for optimal VCE(sat) performance.
Part Context
This part belongs to the family of trench IGBTs developed for high-efficiency power switching. It serves as a discrete alternative to integrated smart power modules, allowing designers to customize thermal solutions and layout constraints. The TO-220F-3 package provides a robust mechanical connection suitable for heatsink mounting in medium-power industrial and consumer electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Note that Fairchild Semiconductor's discrete product line has been transitioned to ON Semiconductor; verify if the FGPF50N30TTU designation remains active under the new brand or if an equivalent ON Semi part number should be sourced.
